| |
Basic characteristics
 |
| Schematic Cross section of the SiPhotonics technology |
The imec passive silicon photonic IC technology (Imec SiPhotonics) offers:
- substrate: SOI with 220nm Si, 2000nm BOX
- WG module(WaveGuides): 220nm full Si etch for strip waveguides, photonic crystals, ...
- FC module (FiberCoupler): 70nm partial Si etch for fiber couplers, rib waveguides, ...
- Top cladding: deposited oxide or protective resist
- Waveguide losses: 2.5-3dB/cm at 1550nm wavelength
- Fiber coupler efficiency: ~30%, 1550nm center wavelength, 30nm 1dB bandwidth
- Minimum linewidth: 120nm
- Minimum pitch: 280nm
- Statistical process tracking of WG and FC modules
Technology
Imec uses its advanced 200mm wafer fab:
- 200mm pilot line
- 0.13um mask technology (WG, FC)
- 193nm Deep UV lithography, process optimized for generic photonics applications
- ICP-RIE dry etch, process optimized for generic photonics applications
- Oxide deposition and CMP tools
- Statistical process control of all tools/chambers
Applications
SiPhotonics designers target a wide range of applications:
- Datacom and short-reach optical interconnect
- Telecom and access networks
- Sensors (gas, pressure, strain) and read-out ICs
- Biomedical: biomolecule detection, drug development, point-of-care diagnostics
Devices
 | High-index contrast silicon strip waveguide, 450nm (W) x 220nm (H) |
 | Ring resonator (racetrack form). Due to the high index contrast a 5um bend radius can be used. |
 | Arrayed waveguide grating (AWG) with 8 channels, 200GHz channel spacing. Device is 200um x 150um |
 | A combination of two etch depths (FC and WG modules) is used to locally lower the refractive index contrast. |
 | A grating coupler (FC module) coupling light from a single mode fiber to a strip waveguide. |
|
|