2008 mini@sic Europractice MPW runs – Schedule
Accessible for universities, research institutes – see special conditions
Version 3 : 13 December 2007
Through the mini@sic Program EUROPRACTICE IC Service is offering special MPW prototyping conditions to stimulate Academia and publicly funded Research Institutes to prototype small ASIC designs for education or publicly funded research. Through Multi Project Wafer Services, the high cost of a prototype run (masks and wafers) is shared amongst several customers. However for student education or PhD research programs the minimum prototyping charges are still too high. By introducing the mini@sic concept on MPW runs EUROPRACTICE is offering considerably lower minimum prototyping charges for small ASIC designs. Academia and Research Institutes will have the possibility to prototype small designs at low prices on selected MPW runs.
EUROPRACTICE registered (who paid their annual full membership fee) Academic and Research Members from all 27 EU countries and Norway, Iceland, Liechtenstein, Israel, Croatia, Switzerland, Turkey who submit designs for educational or publicly funded research use only have special discounted prices thanks to special grant through the EU-Project EUROPRACTICE IC3 in the 6th Framework.
AMI Semiconductor | J | F | M | A | M | J | J | A | S | O | N | D |
| AMIS 0.7µ C07M-D 2M/1P & AMIS 0.7µ C07M-A 2M/1P/PdiffC/HR | 21 | 7 | 16 | 25 | 3 | |||||||
| AMIS 0.5µ C05M-D 3M/1P & AMIS 0.5µ C05M-A 3M/2P/HR | 6 | 6 | ||||||||||
| AMIS 0.35µ C035M-D 5M/1P & AMIS 0.35µ C035M-A 5M/2P/HR | 4 | 21 | 7 | 22 | 17 | |||||||
| AMIS 0.35µ C035U 4M (3M & 5M optional) | 18 | 14 | 2 | 4 | 13 | 8 | ||||||
| AMIS 0.7µ C07M-I2T100 100 V - 2M & 3M options | 21 | 7 | 16 | 25 | 3 | |||||||
AMIS 0.7μ C07M-I2T30 & I2T30E 30 V - 2M | 21 | 7 | 16 | 25 | 3 | |||||||
| AMIS 0.35µ C035 - I3T80U 80 V 4M - 3M optional (5M on special request) | 3 | 19 | 1 | 1 | ||||||||
| AMIS 0.35µ C035 - I3T50 50 V 4M - 3M optional (5M on special request) | 23 | 24 | ||||||||||
austriamicrosystems | J | F | M | A | M | J | J | A | S | O | N | D |
| austriamicrosystems 0.35µ CMOS C35B3C3 3M/2P/HR/5V IO | 25 | 2 | 1 | 1 | ||||||||
| austriamicrosystems 0.35µ CMOS C35B4C3 4M/2P/HR/5V IO | 25 | 2 | 1 | 1 | ||||||||
| austriamicrosystems 0.35µ CMOS C35OPTO 4M/2P/5V IO | 2 | 1 | ||||||||||
austriamicrosystems 0.35µ HV CMOS H35 50V 3M | 5 | 3 | ||||||||||
austriamicrosystems 0.35µ HV CMOS H35 50V 4M | 5 | 3 | ||||||||||
austriamicrosystems 0.35µ HV CMOS w/EEPROM H35 4M/2P | 5 | 3 | ||||||||||
austriamicrosystems 0.35µ SiGe-BiCMOS S35 4M/4P | 3 | 8 | ||||||||||
| austriamicrosystems 0.18µ HV CMOS | 10 | |||||||||||
IHP | J | F | M | A | M | J | J | A | S | O | N | D |
| IHP SG25V 0.25µ SiGe:C Ft=30GHz@BVCEO>7V | 14 | 5 | 1 | 27 | ||||||||
IHP SG25VD 0.25µ SiGe:C Ft=30GHz@BVCEO>7V+RF HV-LDMOS | 14 | 5 | 1 | 27 | ||||||||
IHP SG25H1 0.25µ SiGe:C Ft/Fmax=180GHz/220GHz 4M/MIM | 14 | 5 | 1 | 27 | ||||||||
IHP SG25H2 0.25µ complementary SiGe:C Ft/Fmax (npn)170/170GHz/ (pnp)90/120GHz 4M/MIM | 14 | 1 | ||||||||||
IHP SG25H3 0.25µ SiGe:C Ft/Fmax= 120/140GHz 4M/MIM | 14 | 5 | 1 | 27 | ||||||||
| IHP SG13B SiGe:C Bipolar/Analog-CMOS Ft/Fmax= 250/300GHz 4M/MIM | 1 | |||||||||||
IHP SG25H1/H2/H3/VD and SG13B with Top Metal 2 (5th thick metal) option | 14 | 5 | 1 | 1 | 27 | |||||||
Bumping available for all IHP technologies with extra charge |