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IHP Technologies

Technical Key-Parameters of the technologies offered for MPW & Prototyping:

1. High-Performance 0.25 µm SiGe:C BiCMOS (SG25H1).

Parameter	npn1	npn2
Bipolar Section
A_E	0.21 x 0.84 µm²	0.18 x 0.84 µm²
Peak f_max	190 GHz	220 GHz
Peak f_T	190 GHz	180 GHz
BV_CE0	1.9 V	1.9 V
BV_CB0	4.5 V	4.5 V
V_A	40 V	40 V
ß	200	200

For CMOS section and passives please see SG25H3.

2. Complementary High-Performance 0.25 µm SiGe:C BiCMOS (SG25H2).

Parameter	npn	pnp
Bipolar Section
A_E	0.21 x 0.84 µm2
Peak f_max	170 GHz	120 GHz
Peak f_T	170 GHz	90 GHz
BV_CE0	1.9 V	-2.5 V
BV_CB0	4.5 V	-4.0 V
V_A	40 V	30 V
ß	160	100

For CMOS section and passives please see SG25H3.

3. 0.25 µm SiGe:C BiCMOS with a set of npn-HBTs, ranging from high RF performance to higher breakdown voltages (SG25H3).

Parameter	High Performance 1	High Performance 2	Medium Voltage	High Voltage
Bipolar Section
A_E	0.22 x 0.84 µm2	0.42 x 0.84 µm2	0.22 x 2.24 µm2	0.22 x 2.24 µm2
Peak f_max	180 GHz	140 GHz	140 GHz	80 GHz
Peak f_T	110 GHz	120 GHz	45 GHz	30 GHz
BV_CE0	2.3 V	2.3 V	5 V	>7 V
BV_CB0	6.0 V	6.0 V	15.5 V	21.0 V
V_A	30 V
ß	150

CMOS Section (0.25 µm)
Core Supply Voltage	2.5 V
nMOS V_th	0.6 V
nMOS I_Dsat	540 µA/µm
nMOS I_off	3 pA/µm
pMOS V_th	-0.56 V
pMOS I_Dsat	230 µA/µm
pMOS I_off	3 pA/µm
Passives
MIM Capacitor	1 fF/µm2
N⁺ Poly Resistor	210 Ω/[]
P⁺ Poly Resistor	280 Ω/[]
High Poly Resistor	1600 Ω/[]
Varactor C_max/C_min	3
Inductor Q@2.4 GHz	12 (1 nH), 6 (15 nH)
Inductor Q@5.8 GHz	16 (1 nH), 10 (2 nH)

4. 0.25 µm SiGe:C BiCMOS with High-Voltage Devices (SGB25VD).

In addition to HBTs the technology also has complementary RF LDMOS. Key parameters are summarized in the following two tables.

Parameter	High Performance	Standard	High Voltage
Bipolar Section
A_E	0.42 x 0.84 µm2
Peak f_max	95 GHz	90 GHz	70 GHz
Peak f_T	75 GHz	45 GHz	25 GHz
BV_CE0	2.4 V	4.0 V	7.0 V
BV_CB0	>7 V	>15 V	>20 V
V_A	>50 V	>80 V	>100 V
ß	190
CMOS Section (0.25 µm)
Core Supply Voltage	2.5 V
nMOS V_th	0.6 V
nMOS I_Dsat	570 µA/µm
nMOS I_off	3 pA/µm
pMOS V_th	-0.51 V
pMOS I_Dsat	290 µA/µm
pMOS I_off	3 pA/µm
Passives
MIM Capacitor	1 fF/µm2
N⁺ Poly Resistor	210 Ω/[]
P⁺ Poly Resistor	310 Ω/[]
High Poly Resistor	2000 Ω/[]
Varactor C_max/C_min	3
Inductor Q@2.4 GHz	12 (1 nH), 6 (15 nH)
Inductor Q@5.8 GHz	16 (1 nH), 10 (2 nH)

	n-LDMOS			p-LDMOS
	n-LDMOS	n-LDMOS 13	n-LDMOS I10****	p-LDMOS 8	p-LDMOS12
	23	n-LDMOS 13	n-LDMOS I10****	p-LDMOS 8	p-LDMOS12
BV_DSS*	26 V	15 V	11.5 V	-10 V	-13.5 V
I_DSAT**	140 µA/µm	140 µA/µm	175 µA/µm	85 µA/µm	90 µA/µm
I_DSAT**	(V_GS = 1.5 V)	(V_GS = 1.5 V)	(V_GS = 1.5 V)	(V_GS = -1.5 V)	(V_GS = -1.5 V)
I_Leakage	< 15 pA/µm	< 15 pA/µm	< 15 pA/µm	< 50 pA/µm	< 50 pA/µm
I_Leakage	(V_DS= 20 V)	(V_DS= 10 V)	(V_DS = 8V)	(V_DS= -8 V)	(V_DS= -8 V)
R_ON	11 Ωmm	7 Ωmm	7.5 Ωmm	16 Ωmm	11.5 Ωmm
Peak f_max***	40 GHz	43 GHz	46 GHz	25 GHz	22 GHz
Peak f_T***	19 GHz	23 GHz	21 GHz	11 GHz	11 GHz
* : @100 pA/µm, : @ V_DS= 5 V , * : @ V_DS= 4 V, **** : substrate isolated
An additional n-LDMOS with BV_DSS of 33 V is available.

5. An additional 0.13 µm BiCMOS with the following Scheduled Parameters is now available.

Parameter	npn13P	npn13V
Bipolar Section
A_E	0.12 x 0.48 µm2
Peak f_max	300 GHz	120 GHz
Peak f_T	250 GHz	45 GHz
BV_CE0	1.7 V	4.0 V
BV_CB0	5.5 V	16.0 V
ß	500	450

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