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IHP Technologies

Technical Key-Parameters of the technologies offered for MPW & Prototyping:

1. High-Performance 0.25 µm SiGe:C BiCMOS (SG25H1).

Parameternpn1npn2
Bipolar Section
AE0.21 x 0.84 µm20.18 x 0.84 µm2
Peak fmax190 GHz220 GHz
Peak fT190 GHz180 GHz
BVCE01.9 V1.9 V
BVCB04.5 V4.5 V
VA40 V40 V
ß200200

For CMOS section and passives please see SG25H3.

 2. Complementary High-Performance 0.25 µm SiGe:C BiCMOS (SG25H2).

Parameter

npn

pnp

Bipolar Section
AE0.21 x 0.84 µm2
Peak fmax170 GHz120 GHz
Peak fT170 GHz90 GHz
BVCE01.9 V-2.5 V
BVCB04.5 V-4.0 V
VA40 V30 V
ß160100

For CMOS section and passives please see SG25H3.

3. 0.25 µm SiGe:C BiCMOS with a set of npn-HBTs, ranging from high RF performance to higher breakdown voltages (SG25H3).

ParameterHigh Performance 1High Performance 2Medium VoltageHigh Voltage
Bipolar Section
AE0.22 x 0.84 µm20.42 x 0.84 µm20.22 x 2.24 µm20.22 x 2.24 µm2
Peak fmax180 GHz140 GHz140 GHz80 GHz
Peak fT110 GHz120 GHz45 GHz30 GHz
BVCE02.3 V2.3 V5 V>7 V
BVCB06.0 V6.0 V15.5 V21.0 V
VA30 V
ß150

 

CMOS Section (0.25 µm)
Core Supply Voltage2.5 V
nMOS Vth0.6 V
nMOS IDsat540 µA/µm
nMOS Ioff3 pA/µm
pMOS Vth-0.56 V
pMOS IDsat230 µA/µm
pMOS Ioff3 pA/µm
Passives
MIM Capacitor1 fF/µm2
N+ Poly Resistor210 Ω/[]
P+ Poly Resistor280 Ω/[]
High Poly Resistor1600 Ω/[]
Varactor Cmax/Cmin3
Inductor Q@2.4 GHz12 (1 nH), 6 (15 nH)
Inductor Q@5.8 GHz16 (1 nH), 10 (2 nH)

 

4. 0.25 µm SiGe:C BiCMOS with High-Voltage Devices (SGB25VD).

In addition to HBTs the technology also has complementary RF LDMOS. Key parameters are summarized in the following two tables.

ParameterHigh PerformanceStandardHigh Voltage
Bipolar Section
AE0.42 x 0.84 µm2
Peak fmax95 GHz90 GHz70 GHz
Peak fT75 GHz45 GHz25 GHz
BVCE02.4 V4.0 V7.0 V
BVCB0>7 V>15 V>20 V
VA>50 V>80 V>100 V
ß190
CMOS Section (0.25 µm)
Core Supply Voltage2.5 V
nMOS Vth0.6 V
nMOS IDsat570 µA/µm
nMOS Ioff3 pA/µm
pMOS Vth-0.51 V
pMOS IDsat290 µA/µm
pMOS Ioff3 pA/µm
Passives
MIM Capacitor1 fF/µm2
N+ Poly Resistor210 Ω/[]
P+ Poly Resistor310 Ω/[]
High Poly Resistor2000 Ω/[]
Varactor Cmax/Cmin3
Inductor Q@2.4 GHz12 (1 nH), 6 (15 nH)
Inductor Q@5.8 GHz16 (1 nH), 10 (2 nH)

 


n-LDMOSp-LDMOS

n-LDMOSn-LDMOS 13n-LDMOS I10****p-LDMOS 8p-LDMOS12
23
BVDSS*26 V15 V11.5 V-10 V-13.5 V
IDSAT**140 µA/µm140 µA/µm175 µA/µm85 µA/µm90 µA/µm
(VGS = 1.5 V)(VGS = 1.5 V)(VGS = 1.5 V)(VGS = -1.5 V)(VGS = -1.5 V)
ILeakage< 15 pA/µm< 15 pA/µm< 15 pA/µm< 50 pA/µm< 50 pA/µm
(VDS = 20 V)(VDS = 10 V)(VDS = 8V)(VDS = -8 V)(VDS = -8 V)
RON11 Ωmm7 Ωmm7.5 Ωmm16 Ωmm11.5 Ωmm
Peak fmax***40 GHz43 GHz46 GHz25 GHz22 GHz
Peak fT***19 GHz23 GHz21 GHz11 GHz11 GHz
* : @100 pA/µm, **: @ VDS = 5 V , *** : @ VDS = 4 V, **** : substrate isolated
An additional n-LDMOS with BVDSS of 33 V is available.

5. An additional 0.13 µm BiCMOS with the following Scheduled Parameters is now available.

Parameter

npn13P

npn13V

Bipolar Section
AE0.12 x 0.48 µm2
Peak fmax300 GHz120 GHz
Peak fT250 GHz45 GHz
BVCE01.7 V4.0 V
BVCB05.5 V16.0 V
ß500450
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