Technical Key-Parameters of the technologies offered for MPW & Prototyping:
High-Performance 0.25 µm SiGe:C BiCMOS (SG25H1)
| Parameter | npn1 | npn2 |
| Bipolar Section | ||
| AE | 0.21 x 0.84 µm2 | 0.18 x 0.84 µm2 |
| Peak fmax | 190 GHz | 220 GHz |
| Peak fT | 190 GHz | 180 GHz |
| BVCE0 | 1.9 V | 1.9 V |
| BVCB0 | 4.5 V | 4.5 V |
| VA | 40 V | 40 V |
| ß | 200 | 200 |
0.25 µm SiGe:C BiCMOS with a set of npn-HBTs, ranging from high RF performance to higher breakdown voltages (SG25H3) PNP Module (SG25H3P)
| Parameter | High Performance 1 | Medium Voltage | High Voltage | pnp |
H3P module | ||||
| Bipolar Section | ||||
| AE | 0.22 x 0.84 µm2 | 0.22 x 2.24 µm2 | 0.22 x 2.24 µm2 | 0.21 x 0.84 µm2 |
| Peak fmax | 180 GHz | 140 GHz | 80 GHz | 120 GHz |
| Peak fT | 110 GHz | 45 GHz | 30 GHz | 90 GHz |
| BVCE0 | 2.3 V | 5 V | >7 V | -2.5 V |
BVCB0 | 6.0 V | 15.5 V | 21.0 V | -4.0 V |
| VA | 30 V | 30 V | 30 V | 30 V |
| ß | 150 | 150 | 150 | 100 |
0.25 µm SiGe:C BiCMOS with High-Voltage Devices (SGB25V)
| Parameter | High Performance | Standard | High Voltage |
| Bipolar Section | |||
| AE | 0.42 x 0.84 µm2 | 0.42 x 0.84 µm2 | 0.42 x 0.84 µm2 |
| Peak fmax | 95 GHz | 90 GHz | 70 GHz |
| Peak fT | 75 GHz | 45 GHz | 25 GHz |
| BVCE0 | 2.4 V | 4.0 V | 7.0 V |
| BVCB0 | >7 V | >15 V | >20 V |
| VA | >50 V | >80 V | >100 V |
| ß | 190 | 190 | 190 |
GOD-Module in SGB25V
n-LDMOS | p-LDMOS | ||
NLD3GD22C | INLD3GD13A**** | PLD3GD19B | |
| BVDSS* | 22 V | 13 V | -19 V |
| IDsat** | 150 µA/µm | 150 µA/µm | -50 µA/µm |
(VGS = 1.5 V) | (VGS = 1.5 V) | (VGS = -1.5 V) | |
| Ileakage | < 15 pA/µm | < 10 pA/µm | > -10 pA/µm |
(VDS = 16 V) | (VDS = 8V) | (VDS = -8 V) | |
| RON | 4 Ωmm | 4 Ωmm | 13 Ωmm |
| Peak fmax*** | 48 GHz | 40 GHz | 27 GHz |
| Peak fT*** | 18 GHz | 23 GHz | 9.5 GHz |
| * : @50 pA/µm, **: @VDS = 5 V , *** : @VDS= 4 V, **** : substrate isolated | |||
| Preliminary target parameters extracted from first prototype preparations. | |||
| The values given may differ from the final parameters. | |||
CMOS and Passives of 0.25 µm and 0.13 µm Technologies
| Parameter | SG25H1/H3* | SG13B/13S | SG13S |
| CMOS Section | |||
| Core Supply Voltage | 2.5 V | 3.3 V | 1.2 V |
| nMOS Vth | 0.6 V | 0.65 V | 0.49 V |
| nMOS IDsat | 540 µA/µm | 520 µA/µm | 500 µA/µm |
| nMOS Ioff | 3 pA/µm | 10 pA/µm | 500 pA/µm |
| pMOS Vth | -0.56 V | -0.61 V | -0.42 V |
| pMOS IDsat | -230 µA/µm | -220 µA/µm | -210 µA/µm |
| pMOS Ioff | -3 pA/µm | -10 pA/µm | -500 pA/µm |
| Passives | |||
| MiM Capacitor | 1 fF/µm2 | 1.5 fF/µm2 | |
| N+ Poly Resistor | 210 Ω/ | - | |
| P+ Poly Resistor | 280 Ω/ | 335 Ω/ | |
| High Poly Resistor | 1600 Ω/ | 750 Ω/ | |
| Varactor Cmax/Cmin | 3 | tbd. | |
| Inductor Q@5.8 GHz (with PM2) | 20 (1 nH), 15 (1.8 nH) | tbd. | |
| Inductor Q@10 GHz (with TM2) | 23 (0.7 nH), 22 (1 nH) | tbd. | |
0.13 μm SiGe:C BiCMOS SG13S, SG13B
| Parameter | npn13P | npn13V |
| Bipolar Section | ||
| AE | 0.12 x 0.48 µm2 | 0.18 x 1.02 µm2 |
| Peak fmax | 300 GHz | 120 GHz |
| Peak fT | 250 GHz | 45 GHz |
| BVCE0 | 1.7 V | 4 V |
| BVCB0 | 5.5 V | 16 V |
| ß | 500 | 450 |