Technical Key-Parameters of the technologies offered for MPW & Prototyping:
High-Performance 0.25 µm SiGe:C BiCMOS (SG25H1)
| Parameter | npn1 | npn2 |
| Bipolar Section | ||
| AE | 0.21 x 0.84 µm2 | 0.18 x 0.84 µm2 |
| Peak fmax | 190 GHz | 220 GHz |
| Peak fT | 190 GHz | 180 GHz |
| BVCE0 | 1.9 V | 1.9 V |
| BVCB0 | 4.5 V | 4.5 V |
| VA | 40 V | 40 V |
| ß | 200 | 200 |
0.25 µm SiGe:C BiCMOS with a set of npn-HBTs, ranging from high RF performance to higher breakdown voltages (SG25H3) PNP Module (SG25H3P)
| Parameter |
High Performance 1 |
Medium Voltage |
High Voltage |
pnp |
|
H3P module |
||||
| Bipolar Section | ||||
| AE |
0.22 x 0.84 µm2 |
0.22 x 2.24 µm2 |
0.22 x 2.24 µm2 |
0.21 x 0.84 µm2 |
| Peak fmax |
180 GHz |
140 GHz |
80 GHz |
120 GHz |
| Peak fT |
110 GHz |
45 GHz |
30 GHz |
90 GHz |
| BVCE0 |
2.3 V |
5 V |
>7 V |
-2.5 V |
|
BVCB0 |
6.0 V |
15.5 V |
21.0 V |
-4.0 V |
| VA |
30 V |
30 V |
30 V |
30 V |
| ß |
150 |
150 |
150 |
100 |
0.25 µm SiGe:C BiCMOS with High-Voltage Devices (SGB25V)
| Parameter |
High Performance |
Standard |
High Voltage |
| Bipolar Section | |||
| AE |
0.42 x 0.84 µm2 |
0.42 x 0.84 µm2 |
>0.42 x 0.84 µm2 |
| Peak fmax |
95 GHz |
90 GHz |
70 GHz |
| Peak fT |
75 GHz |
45 GHz |
25 GHz |
| BVCE0 |
2.4 V |
4.0 V |
7.0 V |
| BVCB0 |
>7 V |
>15 V |
>20 V |
| VA |
>50 V |
>80 V |
>100 V |
| ß |
190 |
190 |
190 |
GOD-Module in SGB25V
|
n-LDMOS |
p-LDMOS |
||
|
NLD3GD22C |
INLD3GD13A**** |
PLD3GD19B |
|
| BVDSS* |
22 V |
13 V |
-19 V |
| IDsat** |
150 µA/µm |
150 µA/µm |
-50 µA/µm |
|
(VGS = 1.5 V) |
(VGS = 1.5 V) |
(VGS = -1.5 V) |
|
| Ileakage |
< 15 pA/µm |
< 10 pA/µm |
> -10 pA/µm |
|
(VDS = 16 V) |
(VDS = 8V) |
(VDS = -8 V) |
|
| RON |
4 Ωmm |
4 Ωmm |
13 Ωmm |
| Peak fmax*** |
48 GHz |
40 GHz |
27 GHz |
| Peak fT*** |
18 GHz |
23 GHz |
9.5 GHz |
| * : @50 pA/µm, **: @VDS = 5 V , *** : @VDS= 4 V, **** : substrate isolated | |||
| Preliminary target parameters extracted from first prototype preparations. | |||
| The values given may differ from the final parameters. | |||
CMOS and Passives of 0.25 µm and 0.13 µm Technologies
| Parameter |
SG25H1/H3* |
SG13B/13S |
SG13S |
| CMOS Section | |||
| Core Supply Voltage |
2.5 V |
3.3 V |
1.2 V |
| nMOS Vth |
0.6 V |
0.65 V |
0.49 V |
| nMOS IDsat |
540 µA/µm |
520 µA/µm |
500 µA/µm |
| nMOS Ioff |
3 pA/µm |
10 pA/µm |
500 pA/µm |
| pMOS Vth |
-0.56 V |
-0.61 V |
-0.42 V |
| pMOS IDsat |
-230 µA/µm |
-220 µA/µm |
-210 µA/µm |
| pMOS Ioff |
-3 pA/µm |
-10 pA/µm |
-500 pA/µm |
| Passives | |||
| MiM Capacitor |
1 fF/µm2 |
1.5 fF/µm2 |
|
| N+ Poly Resistor |
210 Ω/? |
- |
|
| P+ Poly Resistor |
280 Ω/? |
335 Ω/? |
|
| High Poly Resistor |
1600 Ω/? |
750 Ω/? |
|
| Varactor Cmax/Cmin |
3 |
tbd. |
|
| Inductor Q@5.8 GHz (with PM2) |
20 (1 nH), 15 (1.8 nH) |
tbd. |
|
| Inductor Q@10 GHz (with TM2) |
23 (0.7 nH), 22 (1 nH) |
tbd. |
|
* Parameters for SGB25V are similar.
0.13 μm SiGe:C BiCMOS SG13S, SG13B
| Parameter |
npn13P |
npn13V |
| Bipolar Section | ||
| AE |
0.12 x 0.48 µm2 |
0.18 x 1.02 µm2 |
| Peak fmax |
300 GHz |
120 GHz |
| Peak fT |
250 GHz |
45 GHz |
| BVCE0 |
1.7 V |
4 V |
| BVCB0 |
5.5 V |
16 V |
| ß |
500 |
450 |